1 power transistors 2sB1548, 2sB1548a silicon pnp epitaxial planar type for power amplification complementary to 2sd2374 and 2sd2374a n features l high forward current transfer ratio h fe which has satisfactory linearity l low collector to emitter saturation voltage v ce(sat) l full-pack package which can be installed to the heat sink with one screw n absolute maximum ratings (t c =25?c) note: ordering can be made by the common rank (pq rank h fe1 = 70 to 250) in the rank classification. unit: mm 1:base 2:collector 3:emitter toC220d full pack package 1 9.9 0.3 15.0 0.5 13.7 0.2 4.2 0.2 4.6 0.2 2.9 0.2 0.8 0.1 1.4 0.2 23 f 3.2 0.1 2.6 0.1 0.55 0.15 2.54 0.3 5.08 0.5 3.0 0.5 1.6 0.2 * h fe1 rank classification rank q p h fe1 70 to 150 120 to 250 parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings C60 C80 C60 C80 C5 C5 C3 25 2 150 C55 to +150 unit v v v a a w ?c ?c 2sB1548 2sB1548a 2sB1548 2sB1548a t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio base to emitter voltage collector to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i ces i ceo i ebo v ceo h fe1 * h fe2 v be v ce(sat) f t t on t stg t f conditions v ce = C60v, v be = 0 v ce = C80v, v be = 0 v ce = C30v, i b = 0 v ce = C60v, i b = 0 v eb = C5v, i c = 0 i c = C30ma, i b = 0 v ce = C4v, i c = C1a v ce = C4v, i c = C3a v ce = C4v, i c = C3a i c = C3a, i b = C 0.375a v ce = C10v, i c = C 0.5a, f = 10mhz i c = C1a, i b1 = C 0.1a, i b2 = 0.1a min C60 C80 70 10 typ 30 0.5 1.2 0.3 max C200 C200 C300 C300 C1 250 C1.8 C1.2 unit m a m a ma v v v mhz m s m s m s 2sB1548 2sB1548a 2sB1548 2sB1548a 2sB1548 2sB1548a
2 power transistors 2sB1548, 2sB1548a p c ta i c v ce i c v be v ce(sat) i c h fe i c f t i c area of safe operation (aso) r th(t) t 0 160 40 120 80 140 20 100 60 0 40 32 24 16 8 36 28 20 12 4 (1) t c =ta (2) without heat sink (p c =2w) (1) (2) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 0 ?2 ?0 ? ? ? ? 0 ? ? ? ? ? ? t c =25?c ?0ma ?0ma ?0ma ?0ma ?0ma ?6ma ?2ma ?ma ?ma i b =?00ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0 ?.2 ?.0 ?0.8 ?0.2 0.6 ?0.4 0 ? ? ? ? ? ? ? ? v ce =?v t c =25?c base to emitter voltage v be ( v ) collector current i c ( a ) ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 ?0.001 ?0.003 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 i c /i b =10 t c =25?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) ?0.01 ?0.1 ? ?0 ?0.03 ?0.3 ? 1 3 10 30 100 300 1000 3000 10000 v ce =?v t c =25?c collector current i c ( a ) forward current transfer ratio h fe ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 0.1 0.3 1 3 10 30 100 300 1000 v ce =?0v f=10mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) ? ?0 ?00 ?000 ? ?0 ?00 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i cp i c 10ms t=1ms non repetitive pulse t c =25?c dc collector to emitter voltage v ce ( v ) collector current i c ( a ) 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 10 ? 10 ? 1 10 10 3 10 2 (1) (2) (1) without heat sink (2) with a 100 80 t2mm al heat sink time t ( s ) thermal resistance r th (t) ( ?c/w )
|
